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@INPROCEEDINGS{HoffmannEifert:111897,
      author       = {Hoffmann-Eifert, S. and Reiners, M. and Waser, R.},
      title        = {{ALD} grown functional oxide layers for nonvolatile
                      resistive switching memory applications},
      reportid     = {PreJuSER-111897},
      year         = {2012},
      note         = {Record converted from VDB: 16.11.2012},
      comment      = {ECS Meeting and ECS of Japan Fall Meeting},
      booktitle     = {ECS Meeting and ECS of Japan Fall
                       Meeting},
      month         = {Oct},
      date          = {2012-10-07},
      organization  = {Honolulu, Hawaii, USA, 7 Oct 2012},
      subtyp        = {Invited},
      cin          = {JARA-FIT / PGI-7},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/111897},
}