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000011285 1001_ $$0P:(DE-Juel1)VDB89241$$aKnoll, L.$$b0$$uFZJ
000011285 245__ $$aUltrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon
000011285 260__ $$aNew York, NY$$bIEEE$$c2010
000011285 300__ $$a350 - 352
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000011285 440_0 $$02464$$aIEEE Electron Device Letters$$v31$$x0741-3106$$y4
000011285 500__ $$aThis work was supported in part by the German Federal Ministry of Education and Research via the MEDEA+ Project DECISIF(2T104) and in part by the Nanosil funding from the European Community under FP7 Grant 216171. The review of this letter was arranged by Editor C.-P. Chang.
000011285 520__ $$aUltrathin Ni silicides were formed on silicon-on-insulator (SOI) and biaxially tensile strained SOI (SSOI) substrates. The Ni layer thickness crucially determines the silicide phase formation: With a 3-nm Ni layer, high-quality epitaxial NiSi2 layers were grown at temperatures > 450 degrees C, while NiSi was formed with a 5-nm-thick Ni layer. A very thin Pt interlayer, to incorporate Pt into NiSi, improves the thermal stability and the interface roughness and lowers the contact resistivity. The contact resistivity of epitaxial NiSi2 is about one order of magnitude lower than that of a NiSi layer on both As-and B-doped SOI and SSOI.
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000011285 65320 $$2Author$$aContact resistance
000011285 65320 $$2Author$$aepitaxial NiSi2
000011285 65320 $$2Author$$aNi silicide
000011285 65320 $$2Author$$astrained silicon-on-insulator (SSOI)
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000011285 7001_ $$0P:(DE-Juel1)VDB5539$$aZhao, Q. T.$$b1$$uFZJ
000011285 7001_ $$0P:(DE-Juel1)VDB85171$$aHabicht, S.$$b2$$uFZJ
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000011285 7001_ $$0P:(DE-HGF)0$$aGhyselen, B.$$b4
000011285 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b5$$uFZJ
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000011285 9131_ $$0G:(EU-Grant)216171$$aDE-HGF$$vSilicon-based nanostructures and nanodevices for long term nanoelectronics applications
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