%0 Journal Article
%A Urban, C.
%A Emam, M.
%A Sandow, C.
%A Knoch, J.
%A Zhao, Q. T.
%A Raskin, J.-P.
%A Mantl, S.
%T Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI
%J IEEE Electron Device Letters
%V 31
%@ 0741-3106
%C New York, NY
%I IEEE
%M PreJuSER-11286
%P 537 - 539
%D 2010
%Z This work was supported by the European Community's Seventh Framework Program (FP7/2007-2013) under Grant 216171. The review of this letter was arranged by Editor C. Bulucea.
%X We present a detailed direct current and radiofrequency study of fully depleted dopant-segregated Schottky barrier (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer scattering-parameter measurements of n-type NiSi source/drain SB-MOSFETs provide an in-depth understanding of key device parameters (transconductances and capacitances) as a function of the implanted arsenic dose, i. e., different SB height. Devices with 80-nm-channel length show a high ON current of 1150 mA/mm and exhibit a unity-gain cutoff frequency of f(T) = 140 GHz.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000282101200005
%R 10.1109/LED.2010.2045220
%U https://juser.fz-juelich.de/record/11286