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000011286 084__ $$2WoS$$aEngineering, Electrical & Electronic
000011286 1001_ $$0P:(DE-Juel1)VDB76198$$aUrban, C.$$b0$$uFZJ
000011286 245__ $$aRadio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI
000011286 260__ $$aNew York, NY$$bIEEE$$c2010
000011286 300__ $$a537 - 539
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000011286 440_0 $$02464$$aIEEE Electron Device Letters$$v31$$x0741-3106$$y6
000011286 500__ $$aThis work was supported by the European Community's Seventh Framework Program (FP7/2007-2013) under Grant 216171. The review of this letter was arranged by Editor C. Bulucea.
000011286 520__ $$aWe present a detailed direct current and radiofrequency study of fully depleted dopant-segregated Schottky barrier (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer scattering-parameter measurements of n-type NiSi source/drain SB-MOSFETs provide an in-depth understanding of key device parameters (transconductances and capacitances) as a function of the implanted arsenic dose, i. e., different SB height. Devices with 80-nm-channel length show a high ON current of 1150 mA/mm and exhibit a unity-gain cutoff frequency of f(T) = 140 GHz.
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000011286 65320 $$2Author$$aDopant segregation (DS)
000011286 65320 $$2Author$$aMOSFET
000011286 65320 $$2Author$$aNiSi
000011286 65320 $$2Author$$aradio frequency (RF)
000011286 65320 $$2Author$$ascattering-parameters (S-parameters)
000011286 65320 $$2Author$$aSchottky barrier (SB)
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000011286 7001_ $$0P:(DE-HGF)0$$aEmam, M.$$b1
000011286 7001_ $$0P:(DE-Juel1)VDB76199$$aSandow, C.$$b2$$uFZJ
000011286 7001_ $$0P:(DE-Juel1)VDB56683$$aKnoch, J.$$b3$$uFZJ
000011286 7001_ $$0P:(DE-Juel1)VDB5539$$aZhao, Q. T.$$b4$$uFZJ
000011286 7001_ $$0P:(DE-HGF)0$$aRaskin, J.-P.$$b5
000011286 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b6$$uFZJ
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000011286 8567_ $$uhttp://dx.doi.org/10.1109/LED.2010.2045220
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000011286 9131_ $$0G:(EU-Grant)216171$$aDE-HGF$$vSilicon-based nanostructures and nanodevices for long term nanoelectronics applications
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