TY  - JOUR
AU  - Urban, C.
AU  - Emam, M.
AU  - Sandow, C.
AU  - Knoch, J.
AU  - Zhao, Q. T.
AU  - Raskin, J.-P.
AU  - Mantl, S.
TI  - Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI
JO  - IEEE Electron Device Letters
VL  - 31
SN  - 0741-3106
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-11286
SP  - 537 - 539
PY  - 2010
N1  - This work was supported by the European Community's Seventh Framework Program (FP7/2007-2013) under Grant 216171. The review of this letter was arranged by Editor C. Bulucea.
AB  - We present a detailed direct current and radiofrequency study of fully depleted dopant-segregated Schottky barrier (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer scattering-parameter measurements of n-type NiSi source/drain SB-MOSFETs provide an in-depth understanding of key device parameters (transconductances and capacitances) as a function of the implanted arsenic dose, i. e., different SB height. Devices with 80-nm-channel length show a high ON current of 1150 mA/mm and exhibit a unity-gain cutoff frequency of f(T) = 140 GHz.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000282101200005
DO  - DOI:10.1109/LED.2010.2045220
UR  - https://juser.fz-juelich.de/record/11286
ER  -