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@ARTICLE{Urban:11286,
      author       = {Urban, C. and Emam, M. and Sandow, C. and Knoch, J. and
                      Zhao, Q. T. and Raskin, J.-P. and Mantl, S.},
      title        = {{R}adio-{F}requency {S}tudy of {D}opant-{S}egregated
                      n-{T}ype {SB}-{MOSFET}s on {T}hin-{B}ody {SOI}},
      journal      = {IEEE Electron Device Letters},
      volume       = {31},
      issn         = {0741-3106},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-11286},
      pages        = {537 - 539},
      year         = {2010},
      note         = {This work was supported by the European Community's Seventh
                      Framework Program (FP7/2007-2013) under Grant 216171. The
                      review of this letter was arranged by Editor C. Bulucea.},
      abstract     = {We present a detailed direct current and radiofrequency
                      study of fully depleted dopant-segregated Schottky barrier
                      (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer
                      scattering-parameter measurements of n-type NiSi
                      source/drain SB-MOSFETs provide an in-depth understanding of
                      key device parameters (transconductances and capacitances)
                      as a function of the implanted arsenic dose, i. e.,
                      different SB height. Devices with 80-nm-channel length show
                      a high ON current of 1150 mA/mm and exhibit a unity-gain
                      cutoff frequency of f(T) = 140 GHz.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien /
                      NANOSIL - Silicon-based nanostructures and nanodevices for
                      long term nanoelectronics applications (216171)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(EU-Grant)216171},
      shelfmark    = {Engineering, Electrical $\&$ Electronic},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000282101200005},
      doi          = {10.1109/LED.2010.2045220},
      url          = {https://juser.fz-juelich.de/record/11286},
}