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| Hauptseite > Publikationsdatenbank > Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI > print |
| Hauptseite > Publikationsdatenbank > Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI > print |
| 001 | 11286 | ||
| 005 | 20180208224750.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1109/LED.2010.2045220 |
| 024 | 7 | _ | |2 WOS |a WOS:000282101200005 |
| 024 | 7 | _ | |2 ISSN |a 0741-3106 |
| 037 | _ | _ | |a PreJuSER-11286 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 100 | 1 | _ | |0 P:(DE-Juel1)VDB76198 |a Urban, C. |b 0 |u FZJ |
| 245 | _ | _ | |a Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI |
| 260 | _ | _ | |a New York, NY |b IEEE |c 2010 |
| 300 | _ | _ | |a 537 - 539 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |0 2464 |a IEEE Electron Device Letters |v 31 |x 0741-3106 |y 6 |
| 500 | _ | _ | |a This work was supported by the European Community's Seventh Framework Program (FP7/2007-2013) under Grant 216171. The review of this letter was arranged by Editor C. Bulucea. |
| 520 | _ | _ | |a We present a detailed direct current and radiofrequency study of fully depleted dopant-segregated Schottky barrier (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer scattering-parameter measurements of n-type NiSi source/drain SB-MOSFETs provide an in-depth understanding of key device parameters (transconductances and capacitances) as a function of the implanted arsenic dose, i. e., different SB height. Devices with 80-nm-channel length show a high ON current of 1150 mA/mm and exhibit a unity-gain cutoff frequency of f(T) = 140 GHz. |
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| 536 | _ | _ | |0 G:(EU-Grant)216171 |2 European Community |a NANOSIL - Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (216171) |c 216171 |f FP7-ICT-2007-1 |x 1 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |2 WoSType |a J |
| 653 | 2 | 0 | |2 Author |a Dopant segregation (DS) |
| 653 | 2 | 0 | |2 Author |a MOSFET |
| 653 | 2 | 0 | |2 Author |a NiSi |
| 653 | 2 | 0 | |2 Author |a radio frequency (RF) |
| 653 | 2 | 0 | |2 Author |a scattering-parameters (S-parameters) |
| 653 | 2 | 0 | |2 Author |a Schottky barrier (SB) |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Emam, M. |b 1 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB76199 |a Sandow, C. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB56683 |a Knoch, J. |b 3 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB5539 |a Zhao, Q. T. |b 4 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Raskin, J.-P. |b 5 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB4959 |a Mantl, S. |b 6 |u FZJ |
| 773 | _ | _ | |0 PERI:(DE-600)2034325-5 |a 10.1109/LED.2010.2045220 |g Vol. 31, p. 537 - 539 |p 537 - 539 |q 31<537 - 539 |t IEEE Electron Device Letters |v 31 |x 0741-3106 |y 2010 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1109/LED.2010.2045220 |
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