%0 Conference Paper
%A Habicht, S.
%A Feste, S. F.
%A Zhao, Q. T.
%A Mantl, S.
%T Hole mobilities and electrical characteristics of O-gated silicon nanowire array FETs with 110 and 100 channel orientation
%M PreJuSER-11477
%D 2010
%Z Record converted from VDB: 12.11.2012
%< Proceedings of 40th European Solid-State Devices Research Conference,13-17. September, Sevilla, Spain, 2010. - S. 372 - 375
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%U https://juser.fz-juelich.de/record/11477