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@INPROCEEDINGS{Habicht:11477,
      author       = {Habicht, S. and Feste, S. F. and Zhao, Q. T. and Mantl, S.},
      title        = {{H}ole mobilities and electrical characteristics of
                      {O}-gated silicon nanowire array {FET}s with 110 and 100
                      channel orientation},
      reportid     = {PreJuSER-11477},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {Proceedings of 40th European Solid-State Devices Research
                      Conference,13-17. September, Sevilla, Spain, 2010. - S. 372
                      - 375},
      booktitle     = {Proceedings of 40th European
                       Solid-State Devices Research
                       Conference,13-17. September, Sevilla,
                       Spain, 2010. - S. 372 - 375},
      cin          = {IBN-1 / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      url          = {https://juser.fz-juelich.de/record/11477},
}