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Conference Presentation PreJuSER-11478
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Strained-SiGe p-MOSFET with LaLuO3 as high-k gate dielectric and TiN as metal gate

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2010

6th Workshop of the thematic Network on Silicon-on-Insulator Technology (EUROSOI)
Seminar, Grenoble, FranceGrenoble, France, 25 Jan 20102010-01-25


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
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 Record created 2012-11-13, last modified 2018-02-08
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