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@INPROCEEDINGS{Habicht:11564,
      author       = {Habicht, S. and Feste, S. F. and Zhao, Q. T. and Mantl, S.},
      title        = {{H}ole mobilities and electrical characteristics of
                      {O}-gated silicon nanowire array {FET}s with 110 and 100
                      channel orientation},
      reportid     = {PreJuSER-11564},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {40th European Solid-State Devices Research Conference},
      booktitle     = {40th European Solid-State Devices
                       Research Conference},
      month         = {Sep},
      date          = {2010-09-14},
      organization  = {Seville, Spain, 14 Sep 2010},
      cin          = {IBN-1 / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/11564},
}