Hauptseite > Publikationsdatenbank > Contact resistivity and nickel silicidation of strained and unstrained silicon nanowires > print

001     11565
005     20180208193836.0
037 _ _ |a PreJuSER-11565
100 1 _ |a Habicht, S.
|b 0
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111 2 _ |c Grenoble, France
|d 2010-01-25
245 _ _ |a Contact resistivity and nickel silicidation of strained and unstrained silicon nanowires
260 _ _ |c 2010
295 1 0 |a 6th Workshop of the Thematic Network on Silicon-on-Insulator Technolog (EUROSOI)
336 7 _ |a Poster
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336 7 _ |a Conference Paper
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336 7 _ |a Output Types/Conference Poster
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336 7 _ |a INPROCEEDINGS
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500 _ _ |a Record converted from VDB: 12.11.2012
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
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700 1 _ |a Knoll, L.
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700 1 _ |a Zhao, Q. T.
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700 1 _ |a Feste, S. F.
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700 1 _ |a Mantl, S.
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909 C O |o oai:juser.fz-juelich.de:11565
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914 1 _ |y 2010
920 1 _ |d 31.12.2010
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|l Halbleiter-Nanoelektronik
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920 1 _ |0 I:(DE-82)080009_20140620
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