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Talk (non conference) PreJuSER-11818
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Comparison of growth behavior for undoped an Si-doped GaAs and InAs nanowires deposited by selective area MOVPE

 ;  ;  ;  ;

2010

8th International Workshop on epitaxial semiconductors on patterned substrates and novel surfaces
Seminar, Como, ItalyComo, Italy, 14 Jun 20102010-06-14


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
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Document types > Presentations > Talks (non-conference)
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Workflow collections > Public records
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 Record created 2012-11-13, last modified 2018-02-08
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