Hauptseite > Publikationsdatenbank > Comparison of growth behavior for undoped an Si-doped GaAs and InAs nanowires deposited by selective area MOVPE > RIS |
TY - CONF AU - Sladek, K. AU - Penz, A. AU - Akabori, M. AU - Hardtdegen, H. AU - Grützmacher, D. TI - Comparison of growth behavior for undoped an Si-doped GaAs and InAs nanowires deposited by selective area MOVPE M1 - PreJuSER-11818 PY - 2010 N1 - Record converted from VDB: 12.11.2012 Y2 - 14 Jun 2010 M2 - Como, Italy, LB - PUB:(DE-HGF)31 UR - https://juser.fz-juelich.de/record/11818 ER -