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@INPROCEEDINGS{Gerharz:12020,
      author       = {Gerharz, J. and Padmaraju, K. and Moers, J. and
                      Grützmacher, D.},
      title        = {{E}tching {T}itanium {N}itride gate stacked on high-k
                      dielectric},
      reportid     = {PreJuSER-12020},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {Proceedings of the 36th International Conference on Micro
                      $\&$ Nano Engineering (MNE), Genoa, Italy from 19 to 22
                      September 2010},
      booktitle     = {Proceedings of the 36th International
                       Conference on Micro $\&$ Nano
                       Engineering (MNE), Genoa, Italy from 19
                       to 22 September 2010},
      cin          = {IBN-1 / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      url          = {https://juser.fz-juelich.de/record/12020},
}