Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications - JuSER

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Talk (non conference)

Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications

Moers, J.FZJ* ; Gerharz, J.FZJ* ; Mussler, G.FZJ* ; Biasotto, C. ; Jovanovic, V. ; Nanver, L. ; Grützmacher, D.FZJ*

2010

DPG-Frühjahrstagung
Seminar, Regensburg, 21 Mar 2010

Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):

Research Program(s):

Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010

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The record appears in these collections:
Document types > Presentations > Talks (non-conference)
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database

Record created 2012-11-13, last modified 2018-02-08

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