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@ARTICLE{Ishida:12048,
      author       = {Ishida, H. and Liebsch, A.},
      title        = {{C}luster dynamical mean-field study of strongly correlated
                      heterostructures: {C}orrelation-induced reduction of
                      proximity effect},
      journal      = {Physical review / B},
      volume       = {82},
      number       = {4},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-12048},
      pages        = {045107},
      year         = {2010},
      note         = {The work of H. I. was supported by the Grand-in-Aid for
                      Scientific Research (Grant No. 20540191) from the Japan
                      Society for Promotion of Science.},
      abstract     = {We present a dynamical mean-field theory (DMFT) study of
                      strongly correlated heterostructures. In contrast to
                      previous DMFT work on multilayered systems, which was mainly
                      based on the single-site approximation, we investigate the
                      role of interplanar Coulomb correlations by using cellular
                      DMFT. Accordingly, the self-energy matrix exhibits
                      off-diagonal components in the layer index. As a model
                      system we consider the single-band Hubbard model in a thin
                      film geometry. The films can be either free standing or
                      sandwiched between semi-infinite metallic leads. For
                      isolated thin films, it is shown that the metal-insulator
                      phase transition occurs either via a conventional mechanism,
                      with a diverging imaginary part of the local self-energy, or
                      via another one involving a discontinuous change of the real
                      part of the off-diagonal self-energy. When the film is
                      connected to metallic leads, the former phase transition
                      disappears due to the normal-metal proximity effects,
                      whereas the latter survives and significantly influences the
                      electronic properties of the thin film. The leakage of
                      metallic states into the Mott gap of the correlated film is
                      greatly reduced compared to single-site DMFT calculations.},
      keywords     = {J (WoSType)},
      cin          = {IFF-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB781},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000279775900003},
      doi          = {10.1103/PhysRevB.82.045107},
      url          = {https://juser.fz-juelich.de/record/12048},
}