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000012071 0247_ $$2DOI$$a10.1016/j.ultramic.2010.05.003
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000012071 084__ $$2WoS$$aMicroscopy
000012071 1001_ $$0P:(DE-HGF)0$$aRuh, E.$$b0
000012071 245__ $$aInvestigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction
000012071 260__ $$aAmsterdam$$bElsevier Science$$c2010
000012071 300__ $$a1255 - 1266
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000012071 500__ $$aWe kindly acknowledge fruitful discussions with Karsten Tillmann, FZ Julich, Hans Sigg, PSI and Rene Monnier, ETHZ. Financial support by the Swiss National Science Foundation is gratefully acknowledged (Project number 20021-103929).
000012071 520__ $$aSiGe multi quantum well structures were investigated by convergent-beam electron diffraction (CBED) measurements. Detailed layer characterizations were performed by acquiring series of bright field CBED patterns in the form of a line scan across the nanostructures in scanning transmission electron microscopy (STEM) mode. From the higher order Laue zone (HOLZ) lines the local lattice parameters were deduced. The Ge concentration corresponding to these lattice parameters was determined by means of the elasticity theory. In this work it is shown that the lattice constants can be determined locally with an accuracy of about +/- 0.001 to +/- 0.003 angstrom which leads to an accuracy of the corresponding Ge concentration of about 1-2%. The characteristics of the focused electron probe and its influence on the experimental data were used for an estimation of the spatial resolution of the CBED method. For comparison, experimental values regarding the spatial resolution were determined by investigating the abrupt interface between Si(1 1 1) and AlN(0 0 0 1). (C) 2010 Elsevier B.V. All rights reserved.
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000012071 65320 $$2Author$$aCBED
000012071 65320 $$2Author$$aSiGe
000012071 65320 $$2Author$$aMulti quantum well
000012071 65320 $$2Author$$aHOLZ line
000012071 65320 $$2Author$$aThin foil relaxation
000012071 65320 $$2Author$$aLocal concentration
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000012071 7001_ $$0P:(DE-HGF)0$$aMueller, E.$$b1
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