TY  - JOUR
AU  - Ruh, E.
AU  - Mueller, E.
AU  - Mussler, G.
AU  - Sigg, H.C.
AU  - Gruetzmacher, D.
TI  - Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction
JO  - Ultramicroscopy
VL  - 110
SN  - 0304-3991
CY  - Amsterdam
PB  - Elsevier Science
M1  - PreJuSER-12071
SP  - 1255 - 1266
PY  - 2010
N1  - We kindly acknowledge fruitful discussions with Karsten Tillmann, FZ Julich, Hans Sigg, PSI and Rene Monnier, ETHZ. Financial support by the Swiss National Science Foundation is gratefully acknowledged (Project number 20021-103929).
AB  - SiGe multi quantum well structures were investigated by convergent-beam electron diffraction (CBED) measurements. Detailed layer characterizations were performed by acquiring series of bright field CBED patterns in the form of a line scan across the nanostructures in scanning transmission electron microscopy (STEM) mode. From the higher order Laue zone (HOLZ) lines the local lattice parameters were deduced. The Ge concentration corresponding to these lattice parameters was determined by means of the elasticity theory. In this work it is shown that the lattice constants can be determined locally with an accuracy of about +/- 0.001 to +/- 0.003 angstrom which leads to an accuracy of the corresponding Ge concentration of about 1-2%. The characteristics of the focused electron probe and its influence on the experimental data were used for an estimation of the spatial resolution of the CBED method. For comparison, experimental values regarding the spatial resolution were determined by investigating the abrupt interface between Si(1 1 1) and AlN(0 0 0 1). (C) 2010 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000283399100001
DO  - DOI:10.1016/j.ultramic.2010.05.003
UR  - https://juser.fz-juelich.de/record/12071
ER  -