% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Ruh:12071,
      author       = {Ruh, E. and Mueller, E. and Mussler, G. and Sigg, H.C. and
                      Gruetzmacher, D.},
      title        = {{I}nvestigation of the local {G}e concentration in
                      {S}i/{S}i{G}e nanostructures by convergent-beam electron
                      diffraction},
      journal      = {Ultramicroscopy},
      volume       = {110},
      issn         = {0304-3991},
      address      = {Amsterdam},
      publisher    = {Elsevier Science},
      reportid     = {PreJuSER-12071},
      pages        = {1255 - 1266},
      year         = {2010},
      note         = {We kindly acknowledge fruitful discussions with Karsten
                      Tillmann, FZ Julich, Hans Sigg, PSI and Rene Monnier, ETHZ.
                      Financial support by the Swiss National Science Foundation
                      is gratefully acknowledged (Project number 20021-103929).},
      abstract     = {SiGe multi quantum well structures were investigated by
                      convergent-beam electron diffraction (CBED) measurements.
                      Detailed layer characterizations were performed by acquiring
                      series of bright field CBED patterns in the form of a line
                      scan across the nanostructures in scanning transmission
                      electron microscopy (STEM) mode. From the higher order Laue
                      zone (HOLZ) lines the local lattice parameters were deduced.
                      The Ge concentration corresponding to these lattice
                      parameters was determined by means of the elasticity theory.
                      In this work it is shown that the lattice constants can be
                      determined locally with an accuracy of about +/- 0.001 to
                      +/- 0.003 angstrom which leads to an accuracy of the
                      corresponding Ge concentration of about $1-2\%.$ The
                      characteristics of the focused electron probe and its
                      influence on the experimental data were used for an
                      estimation of the spatial resolution of the CBED method. For
                      comparison, experimental values regarding the spatial
                      resolution were determined by investigating the abrupt
                      interface between Si(1 1 1) and AlN(0 0 0 1). (C) 2010
                      Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {570},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Microscopy},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000283399100001},
      doi          = {10.1016/j.ultramic.2010.05.003},
      url          = {https://juser.fz-juelich.de/record/12071},
}