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@INPROCEEDINGS{Yu:12084,
      author       = {Yu, W. and Zhang, B. and Durgun Özben, E. and Minamisawa,
                      R. A. and Luptak, R. and Hagedorn, M. and Holländer, B. and
                      Schubert, J. and Hartmann, J.M. and Bourdelle, K.K. and
                      Zhao, Q. T. and Buca, D. and Mantl, S.},
      title        = {{H}ighmobility {S}i-{G}e channels and novel high-k
                      materials for {N}ano{MOSFET}s},
      reportid     = {PreJuSER-12084},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {Proceeding of 33rd Edition IEEE International Semiconductor
                      Conference, CAS 2010. - S. 57 - 62},
      booktitle     = {Proceeding of 33rd Edition IEEE
                       International Semiconductor Conference,
                       CAS 2010. - S. 57 - 62},
      cin          = {IBN-1 / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      url          = {https://juser.fz-juelich.de/record/12084},
}