Home > Publications database > Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
 
Contribution to a conference proceedings/Contribution to a book PreJuSER-12085
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

 ;  ;  ;  ;  ;  ;  ;  ;

2010

Proceeding of 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010. - S. 875 - 878


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
Notes: Proceedings
Click to display QR Code for this record

The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Document types > Books > Books
Workflow collections > Public records
Publications database
 Record created 2012-11-13, last modified 2018-02-08
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)
JuSER :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.7 | join2_v2510-2-gd5e4e3e
Maintained by juser@fz-juelich.de

Impressum | Data Privacy Policy
This site is also available in the following languages:
Deutsch  English