Hauptseite > Publikationsdatenbank > Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack > RIS |
TY - CONF AU - Zhang, B. AU - Yu, W. AU - Zhao, Q. T. AU - Hartmann, J.M. AU - Luptak, R. AU - Buca, D. AU - Bourdelle, K.K. AU - Wang, X. AU - Mantl, S. TI - Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack M1 - PreJuSER-12087 PY - 2010 N1 - Record converted from VDB: 12.11.2012 LB - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7 UR - https://juser.fz-juelich.de/record/12087 ER -