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@INPROCEEDINGS{Yu:12089,
      author       = {Yu, W. and Zhang, B. and Durgun Özben, E. and Minamisawa,
                      R. A. and Luptak, R. and Hagedorn, M. and Holländer, B. and
                      Schubert, J. and Hartmann, J.M. and Bourdelle, K.K. and
                      Zhao, Q. T. and Buca, D. and Mantl, S. and Grützmacher, D.},
      title        = {{H}igh mobility {S}i-{G}e channels and novel high-k
                      materials for {N}ano{MOSFET}s},
      reportid     = {PreJuSER-12089},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {33rd Edition IEEE International Semiconductor Conference,
                      CAS-2010},
      booktitle     = {33rd Edition IEEE International
                       Semiconductor Conference, CAS-2010},
      month         = {Oct},
      date          = {2010-10-11},
      organization  = {Sinaia, Romania, 11 Oct 2010},
      subtyp        = {Invited},
      cin          = {IBN-1 / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/12089},
}