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@ARTICLE{Schmidt:127116,
      author       = {Schmidt, Matthias and Minamisawa, R. A. and Richter, Simon
                      and Schäfer, Anna and Buca, Dan Mihai and Hartmann, J.M.
                      and Zhao, Qing-Tai and Mantl, Siegfried},
      title        = {{U}nipolar behavior of asymmetrically doped strained {S}i
                      0.5{G}e 0.5 tunneling field-effect transistors},
      journal      = {Applied physics letters},
      volume       = {101},
      number       = {12},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2012-00182},
      pages        = {123501},
      year         = {2012},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000309425700088},
      doi          = {10.1063/1.4751356},
      url          = {https://juser.fz-juelich.de/record/127116},
}