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@PROCEEDINGS{Wirths:127118,
      author       = {Wirths, Stephan and Buca, Dan Mihai and Tiedemann, Andreas
                      and Bernardy, Patric and Holländer, Bernhard and Stoica,
                      Toma and Mussler, Gregor and Breuer, U and Mantl, Siegfried},
      title        = {{L}ow temperature {RPCVD} epitaxial growth of {S}i 1-x{G}e
                      x and {G}e using {S}i2{H}6 and {G}e2{H}6},
      reportid     = {FZJ-2012-00184},
      year         = {2012},
      month         = {Jun},
      date          = {2012-06-04},
      organization  = {International Silicon-Germanium
                       Technology and Device Meeting, UC
                       Berkeley (USA), 4 Jun 2012 - 6 Dec
                       2012},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)26},
      url          = {https://juser.fz-juelich.de/record/127118},
}