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@ARTICLE{Kisner:129103,
      author       = {Kisner, A. and Heggen, Marc and Fischer, Werner and
                      Tillmann, Karsten and Offenhäusser, Andreas and Kubota, L.
                      T. and Mourzina, Youlia},
      title        = {{I}n situ fabrication of ultrathin porous alumina and its
                      application for nanopatterning {A}u nanocrystals on the
                      surface of ion-sensitive field-effect transistors},
      journal      = {Nanotechnology},
      volume       = {23},
      number       = {48},
      issn         = {1361-6528},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2013-00623},
      pages        = {485301},
      year         = {2012},
      abstract     = {In situ fabrication in a single step of thin films of
                      alumina exhibiting a thickness of less than 100 nm and
                      nanopores with a highly regular diameter distribution in
                      order to pattern nanostructures over field-effect devices is
                      a critical issue and has not previously been demonstrated.
                      Here we report the fabrication in situ of 50 nm thick
                      ultrathin nanoporous alumina membranes with a regular pore
                      size directly over metal-free gate ion-sensitive
                      field-effect transistors. Depositing thin films of aluminum
                      by an electron beam at a relatively low rate of deposition
                      on top of chips containing the transistors and using a
                      conventional single-step anodization process permits the
                      production of a well-adhering nanoporous ultrathin layer of
                      alumina on the surface of the devices. The anodization
                      process does not substantially affect the electrical
                      properties of the transistors. The small thickness and pore
                      size of ultrathin alumina membranes allow them to be
                      sequentially employed as masks for patterning Au
                      nanocrystals grown by an electroless approach directly on
                      the top of the transistors. The patterning process using a
                      wet chemical approach enables the size of the patterned
                      crystals to be controlled not only by the dimensions of the
                      pores of alumina, but also by the concentration of the
                      reactants employed. Surface modification of these
                      nanocrystals with alkanethiol molecules demonstrates that
                      the electrostatic charge of the functional groups of the
                      molecules can modulate the electrical characteristics of the
                      transistors. These results represent substantial progress
                      towards the development of novel nanostructured arrays on
                      top of field-effect devices that can be applied for chemical
                      sensing or non-volatile memories.},
      cin          = {PGI-8 / JARA-FIT / ICS-8 / IEK-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ICS-8-20110106 / I:(DE-Juel1)IEK-1-20101013},
      pnm          = {423 - Sensorics and bioinspired systems (POF2-423) / 453 -
                      Physics of the Cell (POF2-453)},
      pid          = {G:(DE-HGF)POF2-423 / G:(DE-HGF)POF2-453},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000311138100011},
      pubmed       = {pmid:23124114},
      doi          = {10.1088/0957-4484/23/48/485301},
      url          = {https://juser.fz-juelich.de/record/129103},
}