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@PHDTHESIS{Roeckerath:1292,
      author       = {Roeckerath, Jens Martin},
      title        = {{S}eltenerd-basierte ternäre {O}xide als alternative
                      {G}atedielektrika},
      volume       = {3},
      school       = {RWTH Aachen},
      type         = {Dr. (Univ.)},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-1292},
      isbn         = {978-3-89336-543-2},
      series       = {Schriften des Forschungszentrums Jülich. Information /
                      Information},
      pages        = {148 S.},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012; RWTH Aachen, Diss.,
                      2008},
      abstract     = {For the further scaling of silicon-based field effect
                      transistors the use of alternative gate dielectrics with
                      $\kappa$>20 – so called high-$\kappa$ dielectrics – is
                      crucial. Only with these materials the leakage currents in
                      the devices can be kept below a critical limit compared to
                      the so far used silicon dioxide. And, the ongoing reduction
                      of feature size of integrated circuits ist the basis for the
                      success of microelectronics industry during the last four
                      decades. Thermodynamic calculations predict that some rare
                      earth based ternary oxides (e.g. $\textit{RE}$ScO$_{3}$ or
                      $\textit{RERE}$O$_{3}$ with $\textit{RE}$ = Y, La or an
                      element from the lanthanide group) are stable in contact
                      with silicon and therefore being considered for the use as
                      alternative gate dielectrics. In this work, GdScO$_{3}$ and
                      LaLuO$_{3}$ thin films deposited with different techniques
                      (pulsed laser deposition, atomic layer deposition and
                      electron beam evaporation) were morphologically and
                      electrically characterized. The produced films are
                      stoichiometric, homogeneous and smooth. They reveal
                      dielectric constants as high as 23 for GdScO$_{3}$ and even
                      up to 32 for LaLuO$_{3}$, undisturbed C-V curves and low
                      leakage current densities. Furthermore, a process for the
                      integration of GdScO$_{3}$ as gate dielectric into
                      silicon-based field effect transistors was developed. The
                      prepared devices show normal transfer and output
                      characteristics. Carrier mobilities of about 120 cm$^{2}$/Vs
                      for bulk silicon and 155 cm$^{2}$/Vs for silicon on
                      insulator substrates were determined. The use of strained
                      silicon yields an improvement of 140\% for the carrier
                      mobility and about 30\% for the maximum drain current and a
                      doubling of the maximum transconductance. The integration of
                      GdScO$_{3}$ as gate dielectric into AlGaN/GaN-MISHFETs
                      resulted in a reduction of the gate leakage current by four
                      orders of magnitude, a doubling of the output power, and a
                      significant improvement of the power added efficiency. In
                      summary, the results of this work confirm the suitability of
                      the rare earth based ternary oxides GdScO$_{3}$ and
                      LaLuO$_{3}$ for the use as alternative gate dielectrics in
                      microelectronics.},
      cin          = {IBN-1},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB799},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/1292},
}