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@INPROCEEDINGS{Moers:129285,
author = {Moers, Jürgen and Gerharz, Julian and Mussler, Gregor and
Grützmacher, Detlev},
title = {{T}he d-{D}ot{FET}: {MOSFET} based on locally strained
silicon},
reportid = {FZJ-2013-00801},
year = {2012},
month = {Nov},
date = {2012-11-11},
organization = {9th International Conference on
Advanced Semiconductors Devices and
Microsystems ASDAM 2012, Smolenice
(Slovakia), 11 Nov 2012 - 16 Jan 2013},
subtyp = {Other},
cin = {JARA-FIT / PGI-9},
cid = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)6},
url = {https://juser.fz-juelich.de/record/129285},
}