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000129372 1001_ $$0P:(DE-Juel1)125566$$aBlömers, Christian$$b0$$eCorresponding author
000129372 245__ $$aHall effect measurements on InAs nanowires
000129372 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
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000129372 520__ $$aWe have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process  with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.
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000129372 7001_ $$0P:(DE-Juel1)VDB106559$$aGrap, T.$$b1
000129372 7001_ $$0P:(DE-Juel1)128603$$aLepsa, Mihail Ion$$b2
000129372 7001_ $$0P:(DE-Juel1)128616$$aMoers, Jürgen$$b3
000129372 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b4
000129372 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b5
000129372 7001_ $$0P:(DE-Juel1)128608$$aLüth, Hans$$b6
000129372 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b7
000129372 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4759124$$gVol. 101, no. 15, p. 152106 -$$n15$$p152106$$tApplied physics letters$$v101$$x0003-6951$$y2012
000129372 8564_ $$yPublished under German "Allianz" Licensing conditions on 2012-10-11. Available in OpenAccess from 2012-10-11$$zPublished final document.
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