TY  - JOUR
AU  - Blömers, Christian
AU  - Grap, T.
AU  - Lepsa, Mihail Ion
AU  - Moers, Jürgen
AU  - Trellenkamp, Stefan
AU  - Grützmacher, Detlev
AU  - Lüth, Hans
AU  - Schäpers, Thomas
TI  - Hall effect measurements on InAs nanowires
JO  - Applied physics letters
VL  - 101
IS  - 15
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-00888
SP  - 152106
PY  - 2012
AB  - We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process  with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000310304900043
DO  - DOI:10.1063/1.4759124
UR  - https://juser.fz-juelich.de/record/129372
ER  -