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001     129372
005     20210129211251.0
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037 _ _ |a FZJ-2013-00888
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100 1 _ |0 P:(DE-Juel1)125566
|a Blömers, Christian
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|e Corresponding author
245 _ _ |a Hall effect measurements on InAs nanowires
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2012
336 7 _ |a Journal Article
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520 _ _ |a We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.
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|a Lepsa, Mihail Ion
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|a Moers, Jürgen
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|a Schäpers, Thomas
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|a 10.1063/1.4759124
|g Vol. 101, no. 15, p. 152106 -
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|x 0003-6951
|y 2012
856 4 _ |y Published under German "Allianz" Licensing conditions on 2012-10-11. Available in OpenAccess from 2012-10-11
|z Published final document.
856 4 _ |u https://juser.fz-juelich.de/record/129372/files/FZJ-129372.pdf
|y Published under German "Allianz" Licensing conditions on 2012-10-11. Available in OpenAccess from 2012-10-11
|z Published final document.
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