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@ARTICLE{Alagha:13285,
      author       = {Alagha, S. and Estévez Hernández, S. and Blömers, C. and
                      Stoica, T. and Calarco, R. and Schäpers, Th.},
      title        = {{U}niversal conductance fluctuations and localization
                      effects in {I}n{N} nanowires connected in parallel},
      journal      = {Journal of applied physics},
      volume       = {108},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-13285},
      pages        = {113704},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The low-temperature quantum transport of InN nanowires
                      grown by plasma-assisted molecular beam epitaxy is
                      investigated. Two sets of nanowires with diameters of 100
                      and 45 nm originating from two different growth runs are
                      studied. Magnetic-field-dependent as well as gate-dependent
                      measurements of universal conductance fluctuations are
                      performed to gain information on the phase-coherence in the
                      electron transport. By analyzing the correlation field and
                      the average fluctuation amplitude a phase-coherence length
                      of several hundred nanometers is extracted for both sets of
                      nanowires at temperatures below 1 K. Conductance
                      fluctuations are also observed when the Fermi wavelength is
                      varied by applying a bias voltage to a back-gate. The
                      results on the electron phase-coherence obtained from the
                      gate-dependent measurements are consistent with the findings
                      from the magnetic field dependent measurements. A
                      considerable damping of the fluctuation amplitude by
                      ensemble averaging is achieved by connecting nanowires in
                      parallel. The suppression of the fluctuation amplitude is
                      studied systematically by measuring samples with different
                      numbers of nanowires. By utilizing the damping of the
                      conductance fluctuations by connecting nanowires in parallel
                      in combination with an averaging over the gate voltage, weak
                      localization effects are resolved. For both sets of
                      nanowires a clear evidence of the weak antilocalization is
                      found, which indicates the presence of spin-orbit coupling.
                      For the spin-orbit scattering length l(so) values in the
                      order of 100 nm are extracted. (c) 2010 American Institute
                      of Physics. [doi: 10.1063/1.3516216]},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000285474100064},
      doi          = {10.1063/1.3516216},
      url          = {https://juser.fz-juelich.de/record/13285},
}