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@ARTICLE{Alagha:13285,
author = {Alagha, S. and Estévez Hernández, S. and Blömers, C. and
Stoica, T. and Calarco, R. and Schäpers, Th.},
title = {{U}niversal conductance fluctuations and localization
effects in {I}n{N} nanowires connected in parallel},
journal = {Journal of applied physics},
volume = {108},
issn = {0021-8979},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-13285},
pages = {113704},
year = {2010},
note = {Record converted from VDB: 12.11.2012},
abstract = {The low-temperature quantum transport of InN nanowires
grown by plasma-assisted molecular beam epitaxy is
investigated. Two sets of nanowires with diameters of 100
and 45 nm originating from two different growth runs are
studied. Magnetic-field-dependent as well as gate-dependent
measurements of universal conductance fluctuations are
performed to gain information on the phase-coherence in the
electron transport. By analyzing the correlation field and
the average fluctuation amplitude a phase-coherence length
of several hundred nanometers is extracted for both sets of
nanowires at temperatures below 1 K. Conductance
fluctuations are also observed when the Fermi wavelength is
varied by applying a bias voltage to a back-gate. The
results on the electron phase-coherence obtained from the
gate-dependent measurements are consistent with the findings
from the magnetic field dependent measurements. A
considerable damping of the fluctuation amplitude by
ensemble averaging is achieved by connecting nanowires in
parallel. The suppression of the fluctuation amplitude is
studied systematically by measuring samples with different
numbers of nanowires. By utilizing the damping of the
conductance fluctuations by connecting nanowires in parallel
in combination with an averaging over the gate voltage, weak
localization effects are resolved. For both sets of
nanowires a clear evidence of the weak antilocalization is
found, which indicates the presence of spin-orbit coupling.
For the spin-orbit scattering length l(so) values in the
order of 100 nm are extracted. (c) 2010 American Institute
of Physics. [doi: 10.1063/1.3516216]},
keywords = {J (WoSType)},
cin = {IBN-1 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000285474100064},
doi = {10.1063/1.3516216},
url = {https://juser.fz-juelich.de/record/13285},
}