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Growth and structural properties of GaAs on Al pseudosubstrates for ultrafast optoelectronics

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2010

Proceedings of 8th International Conference on Advanced Semiconductors Devices and Microsystems, ed.: / J.Breza, D.Donoval, E.Vavrinsky, ASDAM 2010. - 978-1-4244-8572-7. - S. 101 - 104


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Document types > Books > Books
Workflow collections > Public records
Publications database
 Record created 2012-11-13, last modified 2020-06-04
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