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@ARTICLE{Reuters:133433,
      author       = {Reuters, Benjamin and Finken, M. and Wille, A. and
                      Holländer, Bernhard and Heuken, M. and Kalisch, H and
                      Vescan, A.},
      title        = {{R}elaxation and critical strain for maximum {I}n
                      incorporation in {A}l{I}n{G}a{N} on {G}a{N} grown by metal
                      organic vapour phase epitaxy},
      journal      = {Journal of applied physics},
      volume       = {112},
      number       = {9},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2013-01881},
      pages        = {093524 -},
      year         = {2012},
      abstract     = {Quaternary AlInGaN layers were grown on conventional GaN
                      buffer layers on sapphire by metal organic vapour phase
                      epitaxy at different surface temperatures and different
                      reactor pressures with constant precursor flow conditions. A
                      wide range in compositions within $30–62\%$ Al, $5–29\%$
                      In, and $23–53\%$ Ga was covered, which leads to different
                      strain states from high tensile to high compressive. From
                      high-resolution x-ray diffraction and Rutherford
                      backscattering spectrometry, we determined the compositions,
                      strain states, and crystal quality of the AlInGaN layers.
                      Atomic force microscopy measurements were performed to
                      characterize the surface morphology. A critical strain value
                      for maximum In incorporation near the AlInGaN/GaN interface
                      is presented. For compressively strained layers, In
                      incorporation is limited at the interface as residual strain
                      cannot exceed an empirical critical value of about $1.1\%.$
                      Relaxation occurs at about 15 nm thickness accompanied by
                      strong In pulling. Tensile strained layers can be grown
                      pseudomorphically up to 70 nm at a strain state of
                      $0.96\%.$ A model for relaxation in compressively strained
                      AlInGaN with virtual discrete sub-layers, which illustrates
                      the gradually changing lattice constant during stress
                      reduction is presented.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000311968400045},
      doi          = {10.1063/1.4764342},
      url          = {https://juser.fz-juelich.de/record/133433},
}