000133434 001__ 133434
000133434 005__ 20240708133653.0
000133434 0247_ $$2doi$$a10.1016/j.jnoncrysol.2011.12.047
000133434 0247_ $$2ISSN$$a1873-4812
000133434 0247_ $$2ISSN$$a0022-3093
000133434 0247_ $$2WOS$$aWOS:000310394700007
000133434 037__ $$aFZJ-2013-01882
000133434 082__ $$a660
000133434 1001_ $$0P:(DE-Juel1)130263$$aLambertz, Andreas$$b0$$eCorresponding author$$ufzj
000133434 245__ $$aBoron-doped hydrogenated microcrystalline silicon oxide (μc-SiOx:H) for application in thin-film silicon solar cells
000133434 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2012
000133434 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1367831667_965
000133434 3367_ $$2DataCite$$aOutput Types/Journal article
000133434 3367_ $$00$$2EndNote$$aJournal Article
000133434 3367_ $$2BibTeX$$aARTICLE
000133434 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000133434 3367_ $$2DRIVER$$aarticle
000133434 500__ $$3POF3_Assignment on 2016-02-29
000133434 520__ $$aWe report on the development of p-type μc-SiOx:H material, in particular the relationship between the deposition parameters and the material properties like band gap, electrical conductivity, and crystalline volume fraction. The material was deposited from gas mixtures of silane, carbon dioxide and hydrogen by RF-PECVD. The gas flows were varied systematically to evaluate their influence on the material properties. An increase of the oxygen content in the material disturbs the crystalline growth. This can be counteracted by appropriate hydrogen dilutions. Materials with a combination of reasonably high conductivity of 4 × 10− 6 S/cm at a high optical band gap E04 of 2.56 eV and a refractive index of 1.95 are obtained. Applied in single junction μc-Si:H pin solar cells the improved properties of the μc-SiOx:H p-layers are reflected in higher quantum efficiency in the short wavelength range by 10% compare to cells without adding CO2 during p-layer deposition.
000133434 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000133434 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000133434 7001_ $$0P:(DE-Juel1)130238$$aFinger, Friedhelm$$b1
000133434 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b2
000133434 7001_ $$0P:(DE-HGF)0$$aRath, J.K.$$b3
000133434 7001_ $$0P:(DE-HGF)0$$aSchropp, R.E.I.$$b4
000133434 773__ $$0PERI:(DE-600)1500501-x$$a10.1016/j.jnoncrysol.2011.12.047$$gVol. 358, no. 17, p. 1962 - 1965$$n17$$p1962 - 1965$$tJournal of non-crystalline solids$$v358$$x0022-3093$$y2012
000133434 909CO $$ooai:juser.fz-juelich.de:133434$$pVDB
000133434 9141_ $$y2012
000133434 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000133434 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000133434 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000133434 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000133434 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000133434 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000133434 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000133434 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000133434 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences
000133434 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130263$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000133434 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130238$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000133434 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125595$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000133434 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000133434 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000133434 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000133434 9201_ $$0I:(DE-Juel1)IEK-5-20101013$$kIEK-5$$lPhotovoltaik$$x1
000133434 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x2
000133434 980__ $$ajournal
000133434 980__ $$aVDB
000133434 980__ $$aUNRESTRICTED
000133434 980__ $$aI:(DE-Juel1)PGI-9-20110106
000133434 980__ $$aI:(DE-Juel1)IEK-5-20101013
000133434 980__ $$aI:(DE-Juel1)VDB881
000133434 981__ $$aI:(DE-Juel1)IMD-3-20101013
000133434 981__ $$aI:(DE-Juel1)IEK-5-20101013
000133434 981__ $$aI:(DE-Juel1)VDB881