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@ARTICLE{Lambertz:133434,
      author       = {Lambertz, Andreas and Finger, Friedhelm and Holländer,
                      Bernhard and Rath, J.K. and Schropp, R.E.I.},
      title        = {{B}oron-doped hydrogenated microcrystalline silicon oxide
                      (μc-{S}i{O}x:{H}) for application in thin-film silicon
                      solar cells},
      journal      = {Journal of non-crystalline solids},
      volume       = {358},
      number       = {17},
      issn         = {0022-3093},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2013-01882},
      pages        = {1962 - 1965},
      year         = {2012},
      abstract     = {We report on the development of p-type μc-SiOx:H material,
                      in particular the relationship between the deposition
                      parameters and the material properties like band gap,
                      electrical conductivity, and crystalline volume fraction.
                      The material was deposited from gas mixtures of silane,
                      carbon dioxide and hydrogen by RF-PECVD. The gas flows were
                      varied systematically to evaluate their influence on the
                      material properties. An increase of the oxygen content in
                      the material disturbs the crystalline growth. This can be
                      counteracted by appropriate hydrogen dilutions. Materials
                      with a combination of reasonably high conductivity of 4 ×
                      10− 6 S/cm at a high optical band gap E04 of 2.56 eV and a
                      refractive index of 1.95 are obtained. Applied in single
                      junction μc-Si:H pin solar cells the improved properties of
                      the μc-SiOx:H p-layers are reflected in higher quantum
                      efficiency in the short wavelength range by $10\%$ compare
                      to cells without adding CO2 during p-layer deposition.},
      cin          = {PGI-9 / IEK-5 / JARA-FIT},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)IEK-5-20101013 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000310394700007},
      doi          = {10.1016/j.jnoncrysol.2011.12.047},
      url          = {https://juser.fz-juelich.de/record/133434},
}