000133436 001__ 133436
000133436 005__ 20210129211452.0
000133436 0247_ $$2doi$$a10.1063/1.4714768
000133436 0247_ $$2ISSN$$a1077-3118
000133436 0247_ $$2ISSN$$a0003-6951
000133436 0247_ $$2WOS$$aWOS:000304265000107
000133436 0247_ $$2Handle$$a2128/5077
000133436 037__ $$aFZJ-2013-01884
000133436 082__ $$a530
000133436 1001_ $$0P:(DE-HGF)0$$aStefanov, S.$$b0$$eCorresponding author
000133436 245__ $$aSilicon germanium tin alloys formed by pulsed laser induced epitaxy
000133436 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
000133436 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s133436
000133436 3367_ $$2DataCite$$aOutput Types/Journal article
000133436 3367_ $$00$$2EndNote$$aJournal Article
000133436 3367_ $$2BibTeX$$aARTICLE
000133436 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000133436 3367_ $$2DRIVER$$aarticle
000133436 500__ $$3POF3_Assignment on 2016-02-29
000133436 520__ $$aPulsed lased induced epitaxy is used to obtain heteroepitaxial Ge1−xSnx and Si1−x−yGexSny alloys with graded composition on Si(001) substrates. The transition from Ge1−xSnx to Si1−x−yGexSny was achieved by varying the number of laser pulses accordingly with the level of intermixing between Si, Ge, and Sn. Melt duration, predicted by numerical methods, is experimentally confirmed by "in-situ" reflectivity measurements and relates, like the end reflectivity value, to the level of intermixing. The possibility to adjust concentration profiles through laser processing of Sn films on virtual germanium buffer layers for lattice engineering of Ge1−xSnx and Si1−x−yGexSny alloys on silicon substrates is demonstrated.
000133436 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000133436 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000133436 7001_ $$0P:(DE-HGF)0$$aConde, J. C.$$b1
000133436 7001_ $$0P:(DE-HGF)0$$aBenedetti, A.$$b2
000133436 7001_ $$0P:(DE-HGF)0$$aSerra, C.$$b3
000133436 7001_ $$0P:(DE-HGF)0$$aWerner, J.$$b4
000133436 7001_ $$0P:(DE-HGF)0$$aOehme, M.$$b5
000133436 7001_ $$0P:(DE-HGF)0$$aSchulze, J.$$b6
000133436 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b7
000133436 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b8
000133436 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b9
000133436 7001_ $$0P:(DE-HGF)0$$aChiussi, S.$$b10
000133436 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4714768$$gVol. 100, no. 20, p. 204102 -$$n20$$p204102 -$$tApplied physics letters$$v100$$x0003-6951$$y2012
000133436 8564_ $$yPublished under German "Allianz" Licensing conditions on 2012-05-15. Available in OpenAccess from 2012-05-15$$zPublished final document.
000133436 8564_ $$uhttps://juser.fz-juelich.de/record/133436/files/FZJ-133436.pdf$$yPublished under German "Allianz" Licensing conditions on 2012-05-15. Available in OpenAccess from 2012-05-15$$zPublished final document.
000133436 8564_ $$uhttps://juser.fz-juelich.de/record/133436/files/FZJ-133436.jpg?subformat=icon-1440$$xicon-1440
000133436 8564_ $$uhttps://juser.fz-juelich.de/record/133436/files/FZJ-133436.jpg?subformat=icon-180$$xicon-180
000133436 8564_ $$uhttps://juser.fz-juelich.de/record/133436/files/FZJ-133436.jpg?subformat=icon-640$$xicon-640
000133436 909CO $$ooai:juser.fz-juelich.de:133436$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000133436 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000133436 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125595$$aForschungszentrum Jülich GmbH$$b8$$kFZJ
000133436 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich GmbH$$b9$$kFZJ
000133436 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000133436 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000133436 9141_ $$y2012
000133436 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000133436 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000133436 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000133436 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000133436 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000133436 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000133436 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000133436 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000133436 915__ $$0StatID:(DE-HGF)0400$$2StatID$$aAllianz-Lizenz / DFG
000133436 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000133436 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000133436 915__ $$0StatID:(DE-HGF)0520$$2StatID$$aAllianz-OA
000133436 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences
000133436 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000133436 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000133436 9801_ $$aFullTexts
000133436 980__ $$ajournal
000133436 980__ $$aUNRESTRICTED
000133436 980__ $$aJUWEL
000133436 980__ $$aFullTexts
000133436 980__ $$aI:(DE-Juel1)PGI-9-20110106
000133436 980__ $$aI:(DE-82)080009_20140620
000133436 980__ $$aVDB