TY  - JOUR
AU  - Stefanov, S.
AU  - Conde, J. C.
AU  - Benedetti, A.
AU  - Serra, C.
AU  - Werner, J.
AU  - Oehme, M.
AU  - Schulze, J.
AU  - Buca, Dan Mihai
AU  - Holländer, Bernhard
AU  - Mantl, Siegfried
AU  - Chiussi, S.
TI  - Silicon germanium tin alloys formed by pulsed laser induced epitaxy
JO  - Applied physics letters
VL  - 100
IS  - 20
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-01884
SP  - 204102 -
PY  - 2012
AB  - Pulsed lased induced epitaxy is used to obtain heteroepitaxial Ge1−xSnx and Si1−x−yGexSny alloys with graded composition on Si(001) substrates. The transition from Ge1−xSnx to Si1−x−yGexSny was achieved by varying the number of laser pulses accordingly with the level of intermixing between Si, Ge, and Sn. Melt duration, predicted by numerical methods, is experimentally confirmed by "in-situ" reflectivity measurements and relates, like the end reflectivity value, to the level of intermixing. The possibility to adjust concentration profiles through laser processing of Sn films on virtual germanium buffer layers for lattice engineering of Ge1−xSnx and Si1−x−yGexSny alloys on silicon substrates is demonstrated.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000304265000107
DO  - DOI:10.1063/1.4714768
UR  - https://juser.fz-juelich.de/record/133436
ER  -