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001     133436
005     20210129211452.0
024 7 _ |a 10.1063/1.4714768
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024 7 _ |a 0003-6951
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037 _ _ |a FZJ-2013-01884
082 _ _ |a 530
100 1 _ |a Stefanov, S.
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245 _ _ |a Silicon germanium tin alloys formed by pulsed laser induced epitaxy
260 _ _ |a Melville, NY
|c 2012
|b American Institute of Physics
336 7 _ |a Journal Article
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520 _ _ |a Pulsed lased induced epitaxy is used to obtain heteroepitaxial Ge1−xSnx and Si1−x−yGexSny alloys with graded composition on Si(001) substrates. The transition from Ge1−xSnx to Si1−x−yGexSny was achieved by varying the number of laser pulses accordingly with the level of intermixing between Si, Ge, and Sn. Melt duration, predicted by numerical methods, is experimentally confirmed by "in-situ" reflectivity measurements and relates, like the end reflectivity value, to the level of intermixing. The possibility to adjust concentration profiles through laser processing of Sn films on virtual germanium buffer layers for lattice engineering of Ge1−xSnx and Si1−x−yGexSny alloys on silicon substrates is demonstrated.
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700 1 _ |a Conde, J. C.
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700 1 _ |a Benedetti, A.
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700 1 _ |a Serra, C.
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700 1 _ |a Werner, J.
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700 1 _ |a Oehme, M.
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700 1 _ |a Schulze, J.
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700 1 _ |a Buca, Dan Mihai
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700 1 _ |a Holländer, Bernhard
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700 1 _ |a Mantl, Siegfried
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700 1 _ |a Chiussi, S.
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773 _ _ |a 10.1063/1.4714768
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856 4 _ |y Published under German "Allianz" Licensing conditions on 2012-05-15. Available in OpenAccess from 2012-05-15
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