Home > Publications database > Laser Annealing for shallow junction formation in As and B implanted Si0.64Ge0.36 layers > EndNote Text |
%0 Thesis %A Luong, Gia Vinh %T Laser Annealing for shallow junction formation in As and B implanted Si0.64Ge0.36 layers %I TU Dortmund %V Dipl. %M FZJ-2013-01888 %P 94 S. %D 2012 %Z TU Dortmund, Diplomarbeit, 2012 %K Unveröffentlichte Hochschulschrift (GND) %F PUB:(DE-HGF)10 %9 Diploma Thesis %U https://juser.fz-juelich.de/record/133440