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000133440 037__ $$aFZJ-2013-01888
000133440 1001_ $$0P:(DE-Juel1)156277$$aLuong, Gia Vinh$$b0$$eCorresponding author$$ufzj
000133440 245__ $$aLaser Annealing for shallow junction formation in As and B implanted Si0.64Ge0.36 layers$$f2012-08-31
000133440 260__ $$c2012
000133440 300__ $$a94 S.
000133440 3367_ $$0PUB:(DE-HGF)10$$2PUB:(DE-HGF)$$aDiploma Thesis$$bdiploma$$mdiploma$$s1367831723_964
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000133440 3367_ $$2BibTeX$$aMASTERSTHESIS
000133440 502__ $$aTU Dortmund, Diplomarbeit, 2012$$bDipl.$$cTU Dortmund$$d2012
000133440 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
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000133440 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)156277$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
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000133440 9141_ $$y2012
000133440 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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