Hauptseite > Publikationsdatenbank > Laser Annealing for shallow junction formation in As and B implanted Si0.64Ge0.36 layers > print

001     133440
005     20210129211452.0
037 _ _ |a FZJ-2013-01888
100 1 _ |a Luong, Gia Vinh
|0 P:(DE-Juel1)156277
|b 0
|u fzj
|e Corresponding author
245 _ _ |a Laser Annealing for shallow junction formation in As and B implanted Si0.64Ge0.36 layers
|f 2012-08-31
260 _ _ |c 2012
300 _ _ |a 94 S.
336 7 _ |a Diploma Thesis
|b diploma
|m diploma
|0 PUB:(DE-HGF)10
|s 1367831723_964
|2 PUB:(DE-HGF)
336 7 _ |a Thesis
|0 2
|2 EndNote
336 7 _ |a Output Types/Supervised Student Publication
|2 DataCite
336 7 _ |a masterThesis
|2 DRIVER
336 7 _ |a SUPERVISED_STUDENT_PUBLICATION
|2 ORCID
336 7 _ |a MASTERSTHESIS
|2 BibTeX
502 _ _ |a TU Dortmund, Diplomarbeit, 2012
|c TU Dortmund
|b Dipl.
|d 2012
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
|0 G:(DE-HGF)POF2-421
|c POF2-421
|x 0
|f POF II
650 _ 7 |a Unveröffentlichte Hochschulschrift
|x Diplomarbeit
|2 GND
|0 V:(DE-588b)4276536-5
856 4 _ |u https://juser.fz-juelich.de/record/133440/files/FZJ-2013-01888.pdf
|y Restricted
909 C O |o oai:juser.fz-juelich.de:133440
|p VDB
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)156277
913 1 _ |a DE-HGF
|b Schlüsseltechnologien
|1 G:(DE-HGF)POF2-420
|0 G:(DE-HGF)POF2-421
|2 G:(DE-HGF)POF2-400
|v Frontiers of charge based Electronics
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF2
|l Grundlagen zukünftiger Informationstechnologien
914 1 _ |y 2012
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a diploma
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-9-20110106

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