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@ARTICLE{Stemme:133441,
author = {Stemme, F. and Geßwein, H. and Drahus, M. D. and
Holländer, Bernhard and Azucena, C. and Binder, J. R. and
Eichel, Rüdiger-A. and Haußelt, J. and Bruns, M.},
title = {{C}haracterization of non-stoichiometric co-sputtered
{B}a0.6{S}r0.4({T}i1 − x {F}e x )1 + x
{O}3 − δ thin films for tunable passive microwave
applications},
journal = {Analytical and bioanalytical chemistry},
volume = {403},
number = {3},
issn = {1618-2650},
address = {Berlin},
publisher = {Springer},
reportid = {FZJ-2013-01889},
pages = {643 - 650},
year = {2012},
abstract = {The fabrication of novel iron-doped barium strontium
titanate thin films by means of radio frequency (RF)
magnetron co-sputtering is shown. Investigations of the
elemental composition and the dopant distribution in the
thin films obtained by X-ray photoelectron spectroscopy,
Rutherford backscattering spectrometry, and time-of-flight
secondary ion mass spectroscopy reveal a homogeneous dopant
concentration throughout the thin film. The incorporation of
the iron dopant and the temperature-dependent evolution of
the crystal structure and morphology are analyzed by
electron paramagnetic resonance spectroscopy, X-ray
diffraction, Raman spectroscopy, atomic force microscopy,
and scanning electron microscopy. In summary, these results
emphasize the RF magnetron co-sputter process as a versatile
way to fabricate doped thin films. Figure Cross section of
the RF magnetron co-sputter setup and the X-ray
phototelectron spectroscopy iron spectrum of a co-sputtered
iron doped Barium strontium titanate thin film Published in
the special paper collection on Solid State Analysis (FKA
16) with guest editor G. Friedbacher.},
cin = {PGI-9 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000303409600004},
doi = {10.1007/s00216-011-5435-z},
url = {https://juser.fz-juelich.de/record/133441},
}