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000133713 1001_ $$0P:(DE-Juel1)128618$$aNichau, Alexander$$b0$$eCorresponding author
000133713 245__ $$aPhotoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
000133713 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
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000133713 520__ $$aRare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu–O bonds, whereby the diffusion of La was found to be less important.
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000133713 7001_ $$0P:(DE-Juel1)139578$$aSchnee, Michael$$b1
000133713 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b2
000133713 7001_ $$0P:(DE-Juel1)133839$$aBesmehn, Astrid$$b3
000133713 7001_ $$0P:(DE-HGF)0$$aRubio-Zuazo, J.$$b4
000133713 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b5
000133713 7001_ $$0P:(DE-Juel1)138772$$aBernardy, Patric$$b6
000133713 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b7
000133713 7001_ $$0P:(DE-HGF)0$$aMücklich, A.$$b8
000133713 7001_ $$0P:(DE-HGF)0$$aCastro, G. R.$$b9
000133713 7001_ $$0P:(DE-HGF)0$$avon Borany, J.$$b10
000133713 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b11
000133713 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b12
000133713 773__ $$0PERI:(DE-600)1473050-9$$a10.1063/1.4801324$$gVol. 138, no. 15, p. 154709 -$$n15$$p154709$$tThe @journal of chemical physics$$v138$$x0021-9606$$y2013
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