TY  - JOUR
AU  - Nichau, Alexander
AU  - Schnee, Michael
AU  - Schubert, Jürgen
AU  - Besmehn, Astrid
AU  - Rubio-Zuazo, J.
AU  - Breuer, Uwe
AU  - Bernardy, Patric
AU  - Holländer, Bernhard
AU  - Mücklich, A.
AU  - Castro, G. R.
AU  - von Borany, J.
AU  - Buca, Dan Mihai
AU  - Mantl, Siegfried
TI  - Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
JO  - The journal of chemical physics
VL  - 138
IS  - 15
SN  - 0021-9606
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-02120
SP  - 154709
PY  - 2013
AB  - Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu–O bonds, whereby the diffusion of La was found to be less important.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000317814900036
DO  - DOI:10.1063/1.4801324
UR  - https://juser.fz-juelich.de/record/133713
ER  -