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@ARTICLE{Nichau:133713,
      author       = {Nichau, Alexander and Schnee, Michael and Schubert, Jürgen
                      and Besmehn, Astrid and Rubio-Zuazo, J. and Breuer, Uwe and
                      Bernardy, Patric and Holländer, Bernhard and Mücklich, A.
                      and Castro, G. R. and von Borany, J. and Buca, Dan Mihai and
                      Mantl, Siegfried},
      title        = {{P}hotoemission spectroscopy study of the lanthanum
                      lutetium oxide∕silicon interface},
      journal      = {The journal of chemical physics},
      volume       = {138},
      number       = {15},
      issn         = {0021-9606},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2013-02120},
      pages        = {154709},
      year         = {2013},
      abstract     = {Rare earth oxides are promising candidates for future
                      integration into nano-electronics. A key property of these
                      oxides is their ability to form silicates in order to
                      replace the interfacial layer in Si-based complementary
                      metal-oxide field effect transistors. In this work a
                      detailed study of lanthanum lutetium oxide based gate stacks
                      is presented. Special attention is given to the silicate
                      formation at temperatures typical for CMOS processing. The
                      experimental analysis is based on hard x-ray photoemission
                      spectroscopy complemented by standard laboratory experiments
                      as Rutherford backscattering spectrometry and
                      high-resolution transmission electron microscopy.
                      Homogenously distributed La silicate and Lu silicate at the
                      Si interface are proven to form already during gate oxide
                      deposition. During the thermal treatment Si atoms diffuse
                      through the oxide layer towards the TiN metal gate. This
                      mechanism is identified to be promoted via Lu–O bonds,
                      whereby the diffusion of La was found to be less important.},
      cin          = {PGI-9 / JARA-FIT / ZEA-3 / PGI-6},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ZEA-3-20090406 / I:(DE-Juel1)PGI-6-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421) /
                      424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-421 / G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000317814900036},
      doi          = {10.1063/1.4801324},
      url          = {https://juser.fz-juelich.de/record/133713},
}