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| Hauptseite > Publikationsdatenbank > Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface > print |
| Hauptseite > Publikationsdatenbank > Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface > print |
| 001 | 133713 | ||
| 005 | 20210129211525.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4801324 |2 doi |
| 024 | 7 | _ | |a 1089-7690 |2 ISSN |
| 024 | 7 | _ | |a 0021-9606 |2 ISSN |
| 024 | 7 | _ | |a WOS:000317814900036 |2 WOS |
| 024 | 7 | _ | |a 2128/19023 |2 Handle |
| 037 | _ | _ | |a FZJ-2013-02120 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Nichau, Alexander |0 P:(DE-Juel1)128618 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface |
| 260 | _ | _ | |a Melville, NY |c 2013 |b American Institute of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1392302810_24406 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu–O bonds, whereby the diffusion of La was found to be less important. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |f POF II |x 0 |
| 536 | _ | _ | |a 424 - Exploratory materials and phenomena (POF2-424) |0 G:(DE-HGF)POF2-424 |c POF2-424 |f POF II |x 1 |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Schnee, Michael |0 P:(DE-Juel1)139578 |b 1 |
| 700 | 1 | _ | |a Schubert, Jürgen |0 P:(DE-Juel1)128631 |b 2 |
| 700 | 1 | _ | |a Besmehn, Astrid |0 P:(DE-Juel1)133839 |b 3 |
| 700 | 1 | _ | |a Rubio-Zuazo, J. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Breuer, Uwe |0 P:(DE-Juel1)133840 |b 5 |
| 700 | 1 | _ | |a Bernardy, Patric |0 P:(DE-Juel1)138772 |b 6 |
| 700 | 1 | _ | |a Holländer, Bernhard |0 P:(DE-Juel1)125595 |b 7 |
| 700 | 1 | _ | |a Mücklich, A. |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Castro, G. R. |0 P:(DE-HGF)0 |b 9 |
| 700 | 1 | _ | |a von Borany, J. |0 P:(DE-HGF)0 |b 10 |
| 700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 11 |
| 700 | 1 | _ | |a Mantl, Siegfried |0 P:(DE-Juel1)128609 |b 12 |
| 773 | _ | _ | |a 10.1063/1.4801324 |g Vol. 138, no. 15, p. 154709 - |0 PERI:(DE-600)1473050-9 |n 15 |p 154709 |t The @journal of chemical physics |v 138 |y 2013 |x 0021-9606 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/133713/files/FZJ-2013-02120.pdf |y OpenAccess |
| 909 | _ | _ | |p VDB |o oai:juser.fz-juelich.de:133713 |
| 909 | _ | _ | |p VDB |o oai:juser.fz-juelich.de:133713 |
| 909 | C | O | |o oai:juser.fz-juelich.de:133713 |p openaire |p open_access |p VDB |p driver |p dnbdelivery |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)128618 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)139578 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)128631 |
| 910 | 1 | _ | |a Analytik |0 I:(DE-Juel1)ZEA-3-20090406 |k ZEA-3 |b 3 |6 P:(DE-Juel1)133839 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)133839 |
| 910 | 1 | _ | |a Analytik |0 I:(DE-Juel1)ZEA-3-20090406 |k ZEA-3 |b 5 |6 P:(DE-Juel1)133840 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)133840 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)138772 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)125595 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 11 |6 P:(DE-Juel1)125569 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 12 |6 P:(DE-Juel1)128609 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-424 |2 G:(DE-HGF)POF2-400 |v Exploratory materials and phenomena |x 1 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2013 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a OpenAccess |0 StatID:(DE-HGF)0510 |2 StatID |
| 915 | _ | _ | |a JCR/ISI refereed |0 StatID:(DE-HGF)0010 |2 StatID |
| 915 | _ | _ | |a Allianz-Lizenz / DFG |0 StatID:(DE-HGF)0400 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0310 |2 StatID |b NCBI Molecular Biology Database |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1020 |2 StatID |b Current Contents - Social and Behavioral Sciences |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 920 | 1 | _ | |0 I:(DE-Juel1)ZEA-3-20090406 |k ZEA-3 |l Analytik |x 2 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-6-20110106 |k PGI-6 |l Elektronische Eigenschaften |x 3 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a I:(DE-Juel1)ZEA-3-20090406 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
| 980 | 1 | _ | |a FullTexts |
| 981 | _ | _ | |a I:(DE-Juel1)ZEA-3-20090406 |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
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