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Poster (Other) FZJ-2013-02142
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Structural and electrical properties of epitaxially grown GdScO3 and LaLuO3 on GaN

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2012

Semiconductor Interface Specialists Conference 2012, SISC 2012, RWTH AachenSan Diego, RWTH Aachen, USA, 5 Dec 2012 - 8 Dec 20122012-12-052012-12-08

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
Research Program(s):
  1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2012
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Institute Collections > PGI > PGI-9
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 Record created 2013-04-23, last modified 2021-01-29
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