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@ARTICLE{Luptk:13375,
      author       = {Lupták, R. and Lopes, J.M.J. and Lenk, St. and Holländer,
                      B. and Durgun Özben, E. and Tiedemann, A.T. and Schnee, M.
                      and Schubert, J. and Habicht, S. and Feste, S. and Mantl, S.
                      and Breuer, U. and Besmehn, A. and Baumann, P.K. and Heuken,
                      M.},
      title        = {{A}tomic layer deposition of {H}f{O}2 and {A}l2{O}3 layers
                      on 300 mm {S}i wafers for gate stack technology},
      journal      = {Journal of vacuum science $\&$ technology / B},
      volume       = {29},
      issn         = {0734-211X},
      address      = {New York, NY},
      publisher    = {Inst.},
      reportid     = {PreJuSER-13375},
      pages        = {01A301},
      year         = {2011},
      note         = {This work was partially funded by the German Federal
                      Ministry of Education and Research via the
                      EU-MEDEA<SUP>+</SUP> project DECISIF (2T 104) and the
                      technology funding for regional development (ERDF) of the
                      European Union as well as by funds of the Free State of
                      Saxony under Grant No. 13579/2323 (KZWEI).},
      abstract     = {In this study, the authors present results on the
                      structural, chemical, and electrical characterization of
                      HfO2 thin layers on 300 mm Si wafers. The layers were
                      prepared by atomic layer deposition using a liquid delivery
                      system technology for metal organic precursors, which allows
                      an accurate control of the Hf precursor. After optimization
                      of the deposition process with an alkylamide precursor for
                      Hf and ozone chemistry, the growth of the SiOx interfacial
                      layer between the HfO2 layer and the Si substrate could be
                      minimized using TiN as metal gate. In addition, the authors
                      studied the effect of Al2O3 interfacial layers on the
                      properties of metal-oxide-semiconductor capacitor resulting
                      in a positive flat band voltage shift of up to similar to
                      300 mV according to the layer thickness. Gate stacks with
                      equivalent oxide thicknesses around 1.1 nm showed leakage
                      current densities as low as 1.1 x 10(-2) A/cm(2) at VFB of 1
                      V. In addition, the capacitance-voltage curves for thin HfO2
                      layers indicated a negligible hysteresis, below 10 mV, after
                      a forming gas anneal when TiN was used as metal gate. (C)
                      2011 American Vacuum Society. [DOI: 10.1116/1.3521374]},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000286679400040},
      doi          = {10.1116/1.3521374},
      url          = {https://juser.fz-juelich.de/record/13375},
}